| PART |
Description |
Maker |
| 5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| KDR357 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| FME-230A |
Schottky Barrier Diode - 90V/100V
100V, 30A Schottky barrier diode in TO220F package
100V/ 30A Schottky barrier diode in TO220F package
CRYSTAL 20.000000 MHZ SMD 8PF
|
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
| CBS10S30 |
Schottky Barrier Diode Silicon Epitaxial
Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
| KDR331E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR378 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR331 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
| DSB02A20 DSB02A30 DSB02A40 DSB05A40 1N6675 1N6676 |
Schottky Barrier Rectifiers(????哄????娴?????)
DIODE SWITCHING 80V 100MA 1005
Schottky Rectifier 肖特基整流器
0.2 AND 0.5 AMP SCHOTTKY BARRIER RECTIFIERS
|
Compensated Deuices Inc...
3M Company
CDI-DIODE[Compensated Deuices Incorporated]
Compensated Devices Incorporated
|
| KDR331V |
SCHOTTKY BARRIER TYPE DIODE
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
Schottky Barrier Diode
|
KEC(Korea Electronics)
Korea Electronics (KEC)
|
